Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
30 40
61 75
R
θJC
4.5 6Maximum Junction-to-Lead
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Steady-State
°C/W
t ≤ 10s
R
θJA
°C/W
A
45
Junction and Storage Temperature Range °C-55 to 150
T
A
=70°C 1.0
Continuous Drain
Current
.
R
θJA
=75°C/W
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
I
D
8
V
Power Dissipation
A
R
θJA
=75°C/W
T
A
=25°C
WP
DSM
1.7
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
6
Pulsed Drain Current
C
30
±12Gate-Source Voltage
Drain-Source Voltage
AON5802
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
V
DS
(V) = 30V
I
D
= 8 A (VGS = 10V)
R
DS(ON)
< 17 mΩ (V
GS
= 10V)
R
DS(ON)
< 20 mΩ (V
GS
= 4.5V)
R
DS(ON)
< 22 mΩ (V
GS
= 4.0V)
R
DS(ON)
< 24 mΩ (V
GS
= 3.1V)
R
DS(ON)
< 30 mΩ (V
GS
= 2.5V)
ESD Rating: 2000V HBM
General Description
The AON5800 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V V
GS(MAX)
rating. It is
ESD protected. This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its common-drain
configuration. Standard Product AON5802 is Pb-free (meets
ROHS & Sony 259 specifications). AON5802L is a Green Product
ordering option. AON5802 and AON5802L are electrically
identical.
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G1
G2
S1
S2
D
Alpha & Omega Semiconductor, Ltd.