DESCRIPTION
　 2SA1603 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
　 .

FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max
● Excellent linearity of DC forward gain.
● Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
※）　 It　 shows 　 hFE 　 classification 　 in 　 below 　 table.
〈 SMALL-SIGNAL TRANSISTOR 〉
2SA1603
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
OUTLINE DRAWING Unit：ｍｍ
MAXIMUM RATINGS （ Ta=25 ℃）
Symbol Parameter Ratings Unit
VCBO Collector to Base voltage -50 V
VCEO Collector to Emitter voltage -50 V
VEBO Emitter to Base voltage -6 V
I O Collector current -100 mA
Pc Collector dissipation 150 mW
Tj Junction temperature ＋ 125 ℃
Tstg Storage temperature -55～＋ 125 ℃
ELECTRICAL CHARACTERISTICS （ Ta=25 ℃）
Limits
Parameter Symbol Test conditions Min Typ Max Unit
C to E break down voltage V(BR)CEO I C=-100μ A ,R BE=∞ -50 - - 　 V
Collector cut off current ICBO V CB =-50V, I E=0mA - - -0.5 μ A
Emitter cut off current IEBO V EB=-4V, I C=0mA - - -0.5 μ A
DC forward current gain hFE V CE=-6V, I C=-1mA 　　　　　　　　　　　　　※ 　 120 - 820
DC forward current gain hFE V CE=-6V, I C=-0.1mA 　 70 - -
C to E Saturation Vlotage VCE(sat) I C=-30mA ,IB=-1.5mA - - -0.3 V
Gain bandwidth product fT V CE=-6V, I E=10mA - 200 - MHz
Collector output capacitance Cob V CB =-6V, I E=0,f=1MHz - 2.5 - pF
JEITA ： SC-70
TERMINAL CONNECTER
① ： BASE
② ： EMITTER
③ ： COLLECTOR
0.15
0～
0.1
0.70.9
0.3
0.4251.250.425
2.1
0.65
0.65
1.302.0
①
② ③
ISAHAYA　 ELECTRONICS　 CORPORATION
Item Ｑ Ｒ Ｓ 　Ｔ
ｈＦＥ　 Item 120~270 180~390 270~560 390~820