1 Oct-20-1997
BSM 15 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type VCE IC Package Ordering Code
BSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67
BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage
RGE = 20 kΩ
VCGR
1200
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
15
25
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
30
50
Power dissipation per IGBT
TC = 25 °C
Ptot
145
W
Chip temperature Tj + 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC ≤ 0.86 K/W
Diode thermal resistance, chip case RthJCD ≤ 1.5
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 16 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56