1
Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 300
VDSX 300
Continuous Drain Current ID ±32
±
2.4
Pulsed Drain Current ID(puls] ±128
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 32
Non-Repetitive EAS 597.4
Maximum Avalanche Energy
Repetitive EAR 27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Max. Power Dissipation PD 270
2.40
Operating and Storage Tch +150
Temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3775-01
FUJI POWER MOSFET
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breadown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS
VDS=300V VGS=0V
VDS=240V VGS=0V
VGS=±30V
ID=16A VGS=10V
ID=16A VDS=25V
VCC=180V ID=16A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
Rth(ch-a) *1 channel to ambient
0.463
87.0
52.0
°C/W
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=150V
ID=32A
VGS=10V
IF=32A VGS=0V Tch=25°C
IF=32A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
300
3.0 5.0
25
250
100
0.10 0.13
12 24
1970 2955
335 502
20 30
29 44
7.5 11
57 86
7 10.5
44.5 67.0
18.0 27.0
13.5 20.5
0.90 1.50
270
3.0
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
G : Gate
S2 : Source
D : Drain
S1 : Source
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
*1 Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
200406
Foot Print
VGS=-30V
Ta=25°C
Note *2
Note *3
Note *4
VDS 300V
Note *5
Tc=25°C
Ta=25°C Note*1
=
<
Note *1:Surface mounted on 1000mm
2
,t=1.6mm
FR-4 PCB(Drain pad area:500mm
2)
Note *2:Tch 150°C,Repetitive and Non-repetitive
Note *3:StartingTch=25°C,IAS=13A,L=6.13mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *4:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *5:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
=
<
=
<
=
<
=
<