DATA SHEET
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NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER ⋅⋅⋅ LOW NOISE ⋅⋅⋅ HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
Document No. PU10009EJ01V0DS (1st edition)
Date Published October 2001 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices 2001
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
• Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
•fT = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5509 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5509-T2 3 kpcs/reel • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 100 mA
Total Power Dissipation Ptot
Note
190 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Free Air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.