APM3011N
器件描述:N-Channel Enhancement Mode MOSFET
文件大小:606.19KB,共11页
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器件资料摘要:
N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
APM3011N
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
• 30V/60A , R
DS(ON)
=9mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=14mΩ(typ.) @ V
GS
=5V
• Super High Dense Cell Design for Extremely
Low R
DS(ON)
• Reliable and Rugged
• TO-220, TO-252 and TO-263 Packages
• Power Management in Desktop Computer or
DC/DC Converters Systems.
APM3011N
Handling Code
Temp. Range
Package Code
Package Code
F : TO-220 U :TO-252 G : TO-263
Temp. Range
C : 0 to 70 C
Handling Code
TU : Tube
TR : Tape & Reel
°
APM3011N G/U/F : APM3011N
XXXXX
XXXXX - Date Code
Symbol Parameter Rating Unit
V
DSS
Drain-Source Voltage 30
V
GSS
Gate-Source Voltage ±20
V
I
D
*
Maximum Drain Current – Continuous 60
I
DM
Maximum Drain Current – Pulsed 120
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Top View of TO-220 , TO-252 and TO-263