2SK3561
2005-01-26 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561

Switching Regulator Applications


• Low drain-source ON resistance: R
DS (ON) = 0.75
Ω (typ.)
• High forward transfer admittance: |Y
fs| = 6.5S (typ.)
• Low leakage current: I
DSS = 100
μA (V
DS = 500 V)
• Enhancement mode: V
th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
500 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
500 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
8
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
32
A
Drain power dissipation (Tc = 25°C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
312 mJ
Avalanche current I
AR
8 A
Repetitive avalanche energy (Note 3) E
AR
4 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
3.125 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150℃ .
Note 2: V
DD
= 90 V, T
ch
= 25°C(initial), L = 8.3 mH, I
AR
= 8 A, R
G
= 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.


Unit: mm

1: Gate
2: Drain
3: Source


JEDEC ―
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2