1
Motorola Bipolar Power Transistor Device Data
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115 C0068C0097C0116C0097 C0083C0104C0101C0101C0116
C0083C0087C0073C0084C0067C0072C0077C0079C0068C0069 C0083C0101C0114C0105C0101C0115
C0078C0080C0078 C0083C0105C0108C0105C0099C0111C0110 C0080C0111C0119C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
These devices are designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
• Reverse Biased SOA with Inductive Loads @ T
C
= 100C0095C
• Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100C0095C
. . . t
c
@ 1 A, 100C0095C is 290 ns (Typ).
• 700 V Blocking Capability
• SOA and Switching Applications Information.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
MJE13002
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
MJE13003
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎ
V
CEO(sus)
ÎÎÎÎÎÎ
300
ÎÎÎÎÎÎ
400
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎ
V
CEV
ÎÎÎÎÎÎ
600
ÎÎÎÎÎÎ
700
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Base Voltage
ÎÎÎÎÎÎ
V
EBO
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
9
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak (1) ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
I
C
I
CM
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
1.5
3 ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
— Peak (1)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
I
B
I
BM
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
0.75
1.5
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Current — Continuous
— Peak (1)
ÎÎÎÎÎÎ
I
E
I
EM
ÎÎÎÎÎÎÎÎÎÎÎ
2.25
4.5
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ T
A
= 25C0095C
Derate above 25C0095C ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
P
D
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
1.4
11.2 ÎÎÎÎ
ÎÎÎÎ
Watts
mW/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ T
C
= 25C0095C
Derate above 25C0095C
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
P
D
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
40
320
ÎÎÎÎ
ÎÎÎÎ
Watts
mW/C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎÎÎÎÎ
–65 to +150
ÎÎÎÎ
C0095C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Max ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎ
R
θJC
ÎÎÎÎÎÎÎÎÎÎÎ
3.12
ÎÎÎÎ
C0095C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎÎ
R
θJA
ÎÎÎÎÎÎÎÎÎÎÎ
89
ÎÎÎÎ
C0095C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Load Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎ
T
L
ÎÎÎÎÎÎÎÎÎÎÎ
275
ÎÎÎÎ
C0095C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle C0118 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13002/D
 Motorola, Inc. 1995
C0077C0074C0069C0049C0051C0048C0048C0050
C0077C0074C0069C0049C0051C0048C0048C0051
1.5 AMPERE
NPN SILICON
POWER TRANSISTORS
300 AND 400 VOLTS
40 WATTS
*Motorola Preferred Device
C0042
C0042
CASE 77–08
TO–225AA TYPE
REV 4