1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using TrenchMOS technology, featuring very low on-state resistance and including
TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and
overtemperature protection.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
Rev. 04 — 23 June 2005 Product data sheet
a73 Q101 compliant a73 Integrated temperature sensor
a73 ESD protection a73 Integrated current sensor
a73 Variable valve timing for engines a73 Electrical power assisted steering
a73 Automotive and power switching a73 Fan control
a73 V
DS
≤ 40 V a73 V
F
= 658 mV (typ)
a73 I
D
≤ 155 A a73 S
F
= −1.54 mV/K (typ)
a73 R
DSon
= 4.7 mΩ (typ) a73 I
D
/I
sense
= 615 (typ)
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT427 (D2PAK)
2I
sense
3 anode (A)
4 drain (D)
5 cathode (K)
6 kelvin source
7 source (S)
mb mounting base; connected to
drain (D)
mb
1
4
76532
D
S
I
sense
Kelvin source
sym110
G
A
K