APM3095P
器件描述:P-Channel Enhancement Mode MOSFET
文件大小:140.94KB,共9页
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器件资料摘要:
P-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM3095P
Pin Description
Ordering and Marking Information
Features
Applications
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
• -30V/-6A , R
DS(ON)
=95mΩ(typ.) @ V
GS
=-10V
R
DS(ON)
=140mΩ(typ.) @ V
GS
=-4.5V
• Super High Dense Cell Design for Extremely
Low R
DS(ON)
• Reliable and Rugged
• TO-252 Package
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Symbol Parameter Rating Unit
V
DSS
Drain-Source Voltage -30
V
GSS
Gate-Source Voltage ±25
V
I
D
*
Maximum Drain Current – Continuous -12
I
DM
Maximum Drain Current – Pulsed -30
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
APM3095P
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
APM3095P U :
APM3095P
XXXXX
XXXXX - Date Code
Top View of TO-252
GD S
P-Channel MOSFET
G
S
DD