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2SC5859

器件描述:TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
器件厂商:TOSHIBA [Toshiba Semiconductor]
文件大小:200KB,共5页
Sponsor by e络盟
器件资料摘要:
2SC5859
2004-5-18 1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859

HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV


null High Voltage : VCBO = 1700 V
null Low Saturation Voltage : VCE
(sat)
= 3 V (max)
null High Speed : tf(2) = 0.1 µs (Typ.)


MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector−Base Voltage V
CBO
1700 V
Collector−Emitter Voltage V
CEO
750 V
Emitter−Base Voltage V
EBO
5 V
DC I
C
23
Collector Current
Pulse I
CP
46
A
Base Current I
B
11.5 A
Collector Power Dissipation P
C
210 W
Junction Temperature T
j
150 °C
Storage Temperature Range T
stg
−55~150 °C

ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT
Collector Cut−off Current I
CBO
V
CB
= 1700 V, I
E
= 0 ― ― 1 mA
Emitter Cut−off Current I
EBO
V
EB
= 5 V, I
C
= 0 ― ― 100 µA
Collector − Emitter Breakdown Voltage V
(BR) CEO
I
C
= 10 mA, I
B
= 0 750 ― ― V
h
FE (1)
V
CE
= 5 V, I
C
= 2 A 20 ― 55
h
FE (2)
V
CE
= 5 V, I
C
= 8 A 10 ― 22 DC Current Gain
h
FE (3)
V
CE
= 5 V, I
C
= 18 A 4.5 ― 8

Collector−Emitter Saturation Voltage V
CE (sat)
I
C
= 18 A, I
B
= 4.5 A ― ― 3 V
Base−Emitter Saturation Voltage V
BE (sat)
I
C
= 18 A, I
B
= 4.5 A ― 1.0 1.5 V
Transition Frequency f
T
V
CE
= 10 V, I
C
= 0.1 A ― 2 ― MHz
Collector Output Capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz ― 320 ― pF
Storage Time t
stg(1)
― 4 ―
Fall Time t
f(1)
I
CP
= 8 A , I
B1
(end) = 1 A
f
H
= 32 kHz
― 0.15 ―
µs
Storage Time t
stg(2)
― 1.8 ―
Switching Time
Fall Time t
f(2)
I
CP
= 7.5 A, I
B1
(end) = 1 A
f
H
= 100 kHz
― 0.1 ―
µs


Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-21F2A
Weight: 9.75 g (typ.)