@vic AV882

Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com

TO-126 Plastic-Encapsulate Transistors

AV882 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM
: 1.25 W（Tamb=25℃）
Collector current
I
CM
: 3 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃






ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= 100μA， I
E
=0 40 V
Collector-emitter breakdown voltage V(BR)
CEO
Ic= 10 mA， I
B
=0 30 V
Emitter-base breakdown voltage V(BR)
EBO
I
E
= 100 μA， I
C
=0 6 V
Collector cut-off current I
CBO
V
CB
= 40 V， I
E
=0 1 µA
Collector cut-off current I
CEO
V
CE
= 30 V， I
B
=0 1 µA
Emitter cut-off current I
EBO
V
EB
= 6 V， I
C
=0 1 µA
H
FE
（
1
） V
CE
= 2 V, I
C
= 1A 60 400
DC current gain
H
FE
（
2
） V
CE
= 2 V, I
C
= 100mA 32
Collector-emitter saturation voltage V
CE(sat)
I
C
= 2A, I
B
= 0.2 A 0.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 2A, I
B
= 0.2 A 2 V
Transition frequency f
T

V
CE
= 5V , Ic=0.1A
f =10MHz
50 MHz

CLASSIFICATION OF HFE(1)
Rank R O Y GR
Range 60-120 100-200 160-320 200-400






TO-126