Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
28 40
54 75
R
θJL
21 30
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
B
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
13.7
9.7
60
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
30
W
Junction and Storage Temperature Range
A
P
D
°C
3.1
2
-55 to 150
T
A
=70°C
I
D
AO4420, AO4420L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 4: Nov 2004
Features
V
DS
(V) = 30V
I
D
= 13.7A
R
DS(ON)
< 10.5mΩ (V
GS
= 10V)
R
DS(ON)
< 12mΩ (V
GS
= 4.5V)
General Description
The AO4420 uses advanced trench technology to
provide excellent R
DS(ON)
,

shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.