2SA2098
器件描述：High-Current Switching Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：37.66KB，共5页
Sponsor by e络盟器件资料摘要：
2SA2098 / 2SC5887
No.7495-1/5
Applications
•
Relay drivers, lamp drivers, motor drivers.
Features
•
Adoption of MBIT processes.
•
Large current capacitance.
•
Low collector-to-emitter saturation voltage.
•
High-speed switching.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7495
2SA2098 / 2SC5887
Package Dimensions
unit : mm
2041A
[2SA2098 / 2SC5887]
22004 TS IM TA-3725, 3726
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.552.55
2.4
4.5
2.8
0.7
2.552.55
2.4
1 23
Specifications
( ) : 2SA2098
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--50)60 V
Collector-to-Emitter Voltage V
CEO
(--)50 V
Emitter-to-Base Voltage V
EBO
(--)6 V
Collector Current I
C
(--)15 A
Collector Current (Pulse) I
CP
(--)20 A
Base Current I
B
(--)3 A
Collector Dissipation P
C
2W
Tc=25°C30W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=(--)40V, I
E
=0 (--)10 µA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0 (--)10 µA
DC Current Gain h
FE
V
CE
=(--)2V, I
C
=(--)1A 180 (400)560
Gain-Bandwidth Product f
T
V
CE
=(--)10V, I
C
=(--)1A (200)300 MHz
Continued on next page.
No.7495-1/5
Applications
•
Relay drivers, lamp drivers, motor drivers.
Features
•
Adoption of MBIT processes.
•
Large current capacitance.
•
Low collector-to-emitter saturation voltage.
•
High-speed switching.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7495
2SA2098 / 2SC5887
Package Dimensions
unit : mm
2041A
[2SA2098 / 2SC5887]
22004 TS IM TA-3725, 3726
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.552.55
2.4
4.5
2.8
0.7
2.552.55
2.4
1 23
Specifications
( ) : 2SA2098
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--50)60 V
Collector-to-Emitter Voltage V
CEO
(--)50 V
Emitter-to-Base Voltage V
EBO
(--)6 V
Collector Current I
C
(--)15 A
Collector Current (Pulse) I
CP
(--)20 A
Base Current I
B
(--)3 A
Collector Dissipation P
C
2W
Tc=25°C30W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=(--)40V, I
E
=0 (--)10 µA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0 (--)10 µA
DC Current Gain h
FE
V
CE
=(--)2V, I
C
=(--)1A 180 (400)560
Gain-Bandwidth Product f
T
V
CE
=(--)10V, I
C
=(--)1A (200)300 MHz
Continued on next page.