©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
BC327/
328
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage
: BC327
: BC328
-50
-30
V
V
V
CEO
Collector-Emitter Voltage
: BC327
: BC328
-45
-25
V
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -800 mA
P
C
Collector Power Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC327
: BC328
I
C
= -10mA, I
B
=0
-45
-25
V
V
BV
CES
Collector-Emitter Breakdown Voltage
: BC327
: BC328
I
C
= -0.1mA, V
BE
=0
-50
-30
V
V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
=0 -5 V
I
CES
Collector Cut-off Current
: BC327
: BC328
V
CE
= -45V, V
BE
=0
V
CE
= -25V, V
BE
=0
-2
-2
-100
-100
nA
nA
h
FE1
h
FE2
DC Current Gain

V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -300mA
100
40
630
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -500mA, I
B
= -50mA -0.7 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -1V, I
C
= -300mA -1.2 V
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -10mA, f=20MHz 100 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0, f=1MHz 12 pF
Classification 16 25 40
h
FE1
100 ~ 250 160 ~ 400 250 ~ 630
h
FE2
60- 100- 170-
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
1. Collector 2. Base 3. Emitter
TO-92
1