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BAL99LT1G

器件描述:Switching Diode
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:41.65KB,共4页
Sponsor by e络盟
器件资料摘要:
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 3
1 Publication Order Number:
BAL99LT1/D
BAL99LT1
Switching Diode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
70 Vdc
Peak Forward Current I
F
100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient R
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 18
http://onsemi.com
JF Specific Device Code
M = Date Code
MARKING DIAGRAM
ANODE
3
CATHODE
2
1
2
3
Device Package Shipping

ORDERING INFORMATION
BAL99LT1 SOT−23 3000 / Tape & Reel
BAL99LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
JF M