Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
110
Maximum Junction-to-Lead
C
Steady-State 32 40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
47.5 62.5
°C/W
Maximum Junction-to-Ambient
A
Steady-State
71
62.5
°C/W
Maximum Junction-to-Ambient
A
Steady-State
74 110
Maximum Junction-to-Lead
C
Steady-State 35 40
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
48
Parameter: Thermal Characteristics MOSFET Typ Max
W
1.28 1.28
Junction and Storage Temperature Range -55 to 150 -55 to 150
Power Dissipation
P
D
22
A2
Pulsed Forward Current
B
40
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter MOSFET Schottky
Drain-Source Voltage 30
Gate-Source Voltage ±20
Continuous Drain Current
A
I
D
8.5
6.6 A
Pulsed Drain Current
B
40
Schottky reverse voltage 30
Continuous Forward Current
A
I
F
3
AO4916, AO4916L( Green Product )
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Rev 3: Nov 2004
Features
V
DS
(V) = 30V
I
D
= 8.5A
R
DS(ON)
< 17mΩ (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO4916 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. AO4916L
( Green Product ) is offered in a lead-free package.
SOIC-8
G1
S1/A
D2
D2
D1/S2/K
D1/S2/K
D1/S2/K
G21
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.