Power Transistors www.jmnic.com
2SD1588
Silicon NPN Transistors




null Features B C E
﹒With TO-220Fa package
﹒Low frequency power amplifiers and low-speed switching
﹒Complement to type 2SB1097
null Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
V
CBO
Collector to base voltage 100 V
V
CEO
Collector to emitter voltage 60 V
V
EBO
Emitter to base voltage 7 V
I
C
Collector current 7 A
I
CP
Collector current-Pluse 15 A
P
C
Collector power dissipation 30 W
T
j
Junction temperature 150
T
stg
Storage temperature -55~150
TO-220Fa
null Electrical Characteristics Tc=25
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
I
CBO
Collector cut-off current V
CB
=80V, I
E
=0; 10 uA
I
EBO
Emitter ut-off current V
EB
=5V, I
C
=0 10 uA
V
CBO
Collector-base breakdown voltage
V
CEO
Collector-emitter sustaining voltage I
C
=30mA; I
B
=0 60 V
V
EBO
Emitter-base breakdown voltage
V
CE(sat-1)
Collector-emitter saturation voltages I
C
=5A; I
B
=0.5A 0.5 V
V
CE(sat-2)
Collector-emitter saturation voltages
h
FE-1
Forward current transfer ratio I
C
=3A; V
CE
=1V 40 200
h
FE-2
Forward current transfer ratio I
C
=5A; V
CE
=1V 20
V
BE(sat-1)
Base-emitter saturation voltages I
C
=5A; I
B
=0.5A 1.5 V
V
BE(sat-2)
Base-emitter saturation voltages
null h
FE-1
Classifications
M L K
40-80 60-120 100-200




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