©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BDW94CF Rev. A
B
D
W
94
C
F

PN
P
Ep
it
ax
ial
Sil
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T
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an
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July 2005
BDW94CF
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
• Power Darlington TR
• Complement to BDW93CF Respectively
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Electrical Characteristics T
C
= 25°C unless otherwise noted
* Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -100 V
V
CEO
Collector-Emitter Voltage -100 V
I
C
Collector Current (DC) -12 A
I
CP
Collector Current (Pulse) * -15 A
I
B
Base Current -0.2 A
P
C
Collector Dissipation (T
C
= 25°C) 30 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Conditions Min. Typ. Max Units
V
CEO(sus)
Collector-Emitter Sustaining Voltage I
C
-100mA, I
B
= 0 -100 V
I
CBO
Collector Cut-off Current V
CB
= -100V, I
E
= 0 -100 µA
I
CEO
Collector Cut-off Current VV
CE
= -100V, I
B
= 0 -1 mA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
= 0 -2 mA
h
FE
DC Current Gain * V
CE
= -3V, I
C
= -3A
V
CE
= -3V, I
C
= -5A
V
CE
= -3V, I
C
= -10A
1000
750
100
20000
V
CE(sat)
Collector-Emitter Saturation Voltage * I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
-2
-3
V
V
V
BE(sat)
Base-Emitter Saturation Voltage * I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
-2.5
-4
V
V
V
F
Parallel Diode Forward Voltage * I
F
= -5A
I
F
= -10A
-1.3
-1.8
-2
-4
V
V
1
1.Base 2.Collector 3.Emitter
TO-220F