Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Device Typ Max Units
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
R
θJL
n-ch 35 40 °C/W
p-ch 56 62.5 °C/W
p-ch 81 110 °C/W
R
θJL
p-ch 40 48 °C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
-30
Gate-Source Voltage ±20 ±12
I
D
8.5
Drain-Source Voltage 30
-3
AT
A
=70°C 6.6 -2.4
Pulsed Drain Current
B
40 -6
Continuous Drain
Current
A
T
A
=25°C
Power Dissipation
T
A
=25°C
P
D
22
W
T
A
=70°C 1.28 1.28
Junction and Storage Temperature Range -55 to 150 -55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Steady-State
AO4609
Complementary Enhancement Mode Field Effect Transistor
July 2003
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 8.5A -3A
R
DS(ON)
R
DS(ON)
< 18mΩ (V
GS
=10V) < 130mΩ (V
GS
= 10V)
< 28mΩ (V
GS
=4.5V) < 180mΩ (V
GS
= 4.5V)
< 260mΩ (V
GS
= 2.5V)
General Description
The AO4609 uses advanced trench
technology MOSFETs to provide
excellent R
DS(ON)
and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications.
G1
S1
G2
S2
D1
D1
D2
D21
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel p-channel