BSC119N03S G
OptiMOS
®
2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel
• Logic level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
C
=25 °C 30 A
T
C
=100 °C 30
T
A
=25 °C,
R
thJA
=45 K/W
2)
11.9
Pulsed drain current I
D,pulse T
C
=25 °C
3)
120
Avalanche energy, single pulse E
AS
I
D
=30 A, R
GS
=25 Ω 60 mJ
Reverse diode dv/dt dv/dt
I
D
=30 A, V
DS
=24 V,
di/dt=200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage V
GS
±20 V
Power dissipation P
tot
T
C
=25 °C 43 W
T
A
=25 °C,
R
thJA
=45 K/W
2)
2.8
Operating and storage temperature T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
V
DS
30 V
R
DS(on),max
11.9 mΩ
I
D
30 A
Product Summary
Type Package Ordering Code Marking
BSC119N03S G P-TDSON-8 Q7042 S4292 119N03S
P-TDSON-8
Rev. 1.01 page 1 2004-12-15