2SK3797
2005-01-24 1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI)
2SK3797

Switching Regulator Applications


• Low drain-source ON resistance: R
DS (ON) = 0.32
Ω (typ.)
• High forward transfer admittance: |Y
fs| = 7.5 S (typ.)
• Low leakage current: I
DSS = 100
μA (V
DS = 600 V)
• Enhancement model: V
th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
13
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
52
A
Drain power dissipation (Tc = 25°C)
P
D
50 W
Single pulse avalanche energy
(Note 2)
E
AS
1033 mJ
Avalanche current I
AR
13 A
Repetitive avalanche energy (Note 3) E
AR
5.0 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55~150 °C

Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.5 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 10.7 mH, I
AR
= 13 A, R
G
= 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.


Unit: mm

1: Gate
2: Drain
3: Source


JEDEC ―
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
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3
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