COMSET SEMICONDUCTORS 1/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDY23, 180T2 60
BDY24, 181T2 90V
CEO
Collector-Emitter Voltage
BDY25, 182T2 140
V
BDY23, 180T2 60
BDY24, 181T2 100V
CBO
Collector-Base Voltage
BDY25, 182T2 200
V
V
EBO
Emitter-Base Voltage
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
10 V
I
C
Collector Current
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
6 A
I
B
Base Current
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
3 A
P
TOT
Power Dissipation @ T
C
= 25°
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
87.5 Watts
T
J
Junction Temperature
T
Stg
Storage Temperature
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
200
-65 to +200
°C
LF Large Signal Power Amplification
High Current Fast Switching
NPN SILICON TRANSISTORS, DIFFUSED MESA