BC307A
器件描述：PNP EPITAXIAL SILICON TRANSISTOR
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：69.33KB，共5页
Sponsor by e络盟器件资料摘要：
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC307/
308/
309
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage
: BC307
: BC308/309
-50
-30
V
V
V
CEO
Collector-Emitter Voltage
: BC307
: BC308/309
-45
-25
V
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -100 mA
P
C
Collector Power Dissipation 500 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
1. Collector 2. Base 3. Emitter
TO-92
1
BC307/
308/
309
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage
: BC307
: BC308/309
-50
-30
V
V
V
CEO
Collector-Emitter Voltage
: BC307
: BC308/309
-45
-25
V
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -100 mA
P
C
Collector Power Dissipation 500 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
1. Collector 2. Base 3. Emitter
TO-92
1