 Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 2
1 Publication Order Number:
BC447/D
BC447, BC449, BC449A
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BC447
BC449, BC449A
V
CEO
80
100
Vdc
Collector-Base Voltage
BC447
BC449, BC449A
V
CBO
80
100
Vdc
Emitter-Base Voltage V
EBO
5.0 Vdc
Collector Current - Continuous I
C
300 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-55 to
+150
°C
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
MSL: 1
NA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction-to-Ambient
R
θJA
200 °C/W
Thermal Resistance,
Junction-to-Case
R
θJC
83.3 °C/W
Device Package Shipping
ORDERING INFORMATION
BC447 TO-92
http://onsemi.com
CASE 29
TO-92
STYLE 17
5000 Units/Box
3
2
1
BC449 TO-92 5000 Units/Box
COLLECTOR
1
2
BASE
3
EMITTER
BC449A TO-92 5000 Units/Box
MARKING DIAGRAM
BC
44xx
YWW
BC44xx = Specific Device Code
xx = 7, 9 or 9A
Y = Year
WW = Work Week