Absolute Maximum Ratings ( T
J
= 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
V
DRM
Repetitive Peak Off-State Voltage 600 V
I
T(RMS)
R.M.S On-State Current T
C
= 94 °C 6.0 A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
60/66 A
I
2
t
I
2
t
18
A
2
s
P
GM
Peak Gate Power Dissipation 3.0 W
P
G(AV)
Average Gate Power Dissipation 0.3 W
I
GM
Peak Gate Current 2.0 A
V
GM
Peak Gate Voltage 10 V
V
ISO
Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute 1500 V
T
J
Operating Junction Temperature - 40 ~ 125 °C
T
STG
Storage Temperature - 40 ~ 150 °C
Mass 2.0 g
Mar, 2004. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
T(RMS)
= 6 A )
◆ High Commutation dv/dt
◆ Isolation Voltage ( V
ISO
= 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
2.T2
3.Gate
1.T1
Symbol
○
○
○
TO-220F
▼▲
1/6
BTA06-600BSemiWell Semiconductor
1
2
3
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
UL : E228720
Preliminary