BA01207
器件描述：GaAs HBT HYBRID IC
器件厂商：MITSUBISHI [Mitsubishi Electric Semiconductor]
文件大小：27.29KB，共1页
Sponsor by e络盟器件资料摘要：
MITSUBISHI SEMICONDUCTOR
BA01207
Specifications are subject to change without notice. GaAs HBT HYBRID IC
MITSUBISHI ELECTRIC CORP.
Created Date: Apr.2004
DESCRIPTION
The BA01207 GaAs RF amplifier designed for J-cdmaOne
hand-held phone.
FEATURES
Low voltage Vc =3.5V
High power Po=27.5dBm
High gain Gp=27.5dB@Po=27.5dBm
2stage amplifier
Internal input* and output matching
*Use DC block for input port
APPLICATION
N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is
OQPSK) hand set.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol Parameter Condition Ratings* Unit
Vcc Supply voltage of HPA 6 V
Pin Input power ZG=ZL=50Ω 7 dBm
Tc(op) Operating case temp. -20 ∼ +85 °C
Tstg Storage temp. -30 ∼ +125 °C
*Note : Each maximum rating is guaranteed independently .
ELECTRICAL CHARACTERISTICS(Ta=25°C , ZG=ZL=50Ω)
Limits
Symbol Parameter
Test conditions
MIN TYP MAX
Unit
f Frequency 887 - 925 MHz
Iq Quiescent current
Vc=3.5V,Vcb=Vref=2.8V
No Signal
- 55 70 mA
Ict
*1
Total current - 395 420 mA
Icb+Iref Total current - 5.3 10 mA
hadd Power added efficiency - 40 - %
Gain Power Gain 25 27.5 - dB
Adjacent channel power at 900KHz - -50 -47 dBc
ACP
*2
Adjacent channel power at 1.98MHz - -60 -57 dBc
2sp 2nd harmonics - -30 -27 dBc
3sp 3rd harmonics - -45 -30 dBc
Rxnoise Noise in RX band
Po=27.5dBm (IS-95B)
Vc1=Vc2=3.5V
Vcb=Vref=2.8V
- -138 -135 dBm/Hz
Ict
*1
Total current - 107 122 mA
Icb+Iref Total current - 2.5 5.5 mA
Gain Power Gain 21.5 24 - dB
Adjacent channel power at 900KHz
Po=15dBm (IS-95B)
Vc1=Vc2=1.2V
Vcb=Vref=2.8V
- -55 -47 dBc
ACP
*2
Adjacent channel power at 1.98MHz - -66 -58 dBc
*1: Ict=Ic1+Ic2, *2:ACP=ACP (30KHz band at 900/1980KHz)-Po(1.23MHz band)
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as
(i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
1
2
3
7
6
5
4.5 1:Pin
2:Vc1
3:Vc2
4:GND
5:Pout
6:Vcb
7:Vref
8:GND
1.
4
5
4.
5
1.5max.
Outline Drawing
8
4
unit : milimeter
BA01207
Specifications are subject to change without notice. GaAs HBT HYBRID IC
MITSUBISHI ELECTRIC CORP.
Created Date: Apr.2004
DESCRIPTION
The BA01207 GaAs RF amplifier designed for J-cdmaOne
hand-held phone.
FEATURES
Low voltage Vc =3.5V
High power Po=27.5dBm
High gain Gp=27.5dB@Po=27.5dBm
2stage amplifier
Internal input* and output matching
*Use DC block for input port
APPLICATION
N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is
OQPSK) hand set.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol Parameter Condition Ratings* Unit
Vcc Supply voltage of HPA 6 V
Pin Input power ZG=ZL=50Ω 7 dBm
Tc(op) Operating case temp. -20 ∼ +85 °C
Tstg Storage temp. -30 ∼ +125 °C
*Note : Each maximum rating is guaranteed independently .
ELECTRICAL CHARACTERISTICS(Ta=25°C , ZG=ZL=50Ω)
Limits
Symbol Parameter
Test conditions
MIN TYP MAX
Unit
f Frequency 887 - 925 MHz
Iq Quiescent current
Vc=3.5V,Vcb=Vref=2.8V
No Signal
- 55 70 mA
Ict
*1
Total current - 395 420 mA
Icb+Iref Total current - 5.3 10 mA
hadd Power added efficiency - 40 - %
Gain Power Gain 25 27.5 - dB
Adjacent channel power at 900KHz - -50 -47 dBc
ACP
*2
Adjacent channel power at 1.98MHz - -60 -57 dBc
2sp 2nd harmonics - -30 -27 dBc
3sp 3rd harmonics - -45 -30 dBc
Rxnoise Noise in RX band
Po=27.5dBm (IS-95B)
Vc1=Vc2=3.5V
Vcb=Vref=2.8V
- -138 -135 dBm/Hz
Ict
*1
Total current - 107 122 mA
Icb+Iref Total current - 2.5 5.5 mA
Gain Power Gain 21.5 24 - dB
Adjacent channel power at 900KHz
Po=15dBm (IS-95B)
Vc1=Vc2=1.2V
Vcb=Vref=2.8V
- -55 -47 dBc
ACP
*2
Adjacent channel power at 1.98MHz - -66 -58 dBc
*1: Ict=Ic1+Ic2, *2:ACP=ACP (30KHz band at 900/1980KHz)-Po(1.23MHz band)
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as
(i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
1
2
3
7
6
5
4.5 1:Pin
2:Vc1
3:Vc2
4:GND
5:Pout
6:Vcb
7:Vref
8:GND
1.
4
5
4.
5
1.5max.
Outline Drawing
8
4
unit : milimeter