2SC5585 / 2SC5663
Transistors
Rev.B 1/2
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663


The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.


zApplications
For switching
For muting


zFeatures
1) High current.
2) Low VCE(sat).
VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA










zExternal dimensions (Unit : mm)
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5585
Abbreviated symbol : BX
Abbreviated symbol : BXROHM : VMT3
2SC5663
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.61.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
0~0.1
(3)0.32
0.81.2
0.13
0.5
0.22
0.4
0.4
1.2
0.80.2
0.15Max.
0.2
(2)
(1)

zAbsolute maximum ratings (Ta=25°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PC
Tj
Tstg
15 V
V
mA
mW
°C
°C
12
Emitter-base voltage VEBO V6
500
ICP A1 ∗
150
150
−55 to +150
Symbol Limits Unit
∗ Single pulse Pw = 1ms



zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
Cob
Min.
15
12
6
−
270
−
−
−
−
−
−
−
90
7.5
−
−
−
100
680
250
−
VIC = 10µA
IC = 1mA
IE = 10µA
VCB = 15V
VCE = 2V, IC = 10mA
IC = 200mA, IB = 10mA
VCB = 10V, IE = 0A, f = 1MHz
V
V
nA
Emitter cutoff current IEBO −−100 VCB = 6VnA
−
mV
fT
− 320 − VCE = 2V, IE = −10mA, f = 100MHzMHz
pF
Typ. Max. Unit Conditions