Revision 2.2
April 2001
1
R0201-BS62LV1024
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
„ FEATURES
The BS62LV1024 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.02uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1024 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1024 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4mm
STSOP and 8mmx20mm TSOP.
„ DESCRIPTION
„ BLOCK DIAGRAM
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
BS62LV1024
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
•
BS62LV1024TC
BS62LV1024STC
BS62LV1024TI
BS62LV1024STI
BS62LV1024SC
BS62LV1024SI
BS62LV1024PC
BS62LV1024PI
BS62LV1024JC
BS62LV1024JI
A7
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 1024
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Buffer
Output
Address Input Buffer
A3 A2 A1 A0 A10
Data
Buffer
Input
Control
Gnd
Vdd
OE
WE
CE1
DQ5
DQ4
A14
A8
A13
A12
8
8
8
8
DQ7
DQ6
DQ3
DQ2
DQ1
DQ0
A9
A11
A6
14
128
1024
1024
20
A16
A15
A4A5
CE2
BSI
POWER DISSIPATION
SPEED
(ns)
Standby
(IccSB1, M ax)
Operating
(Icc, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3V Vcc=5V Vcc=3V Vcc=5V Vcc=3V
PKG TYPE
BS62LV P-321024SC SO
BS62LV OP-321024TC TS
BS62LV SOP-321024STC ST
BS62LV IP-321024PC PD
BS62LV J-321024JC SO
BS62LV CE1024DC
+0
O
C to +70
O
C 2.4V ~ 5.5V 70 3.0uA 1.0uA 35mA 20mA
DI
BS62LV P-321024SI SO
BS62LV OP-321024TI TS
BS62LV SOP-321024STI ST
BS62LV IP-321024PI PD
BS62LV J-321024JI SO
BS62LV CE1024DI
-40
O
C to +85
O
C 2.4V ~ 5.5V 70 5.0uA 1.5uA 40mA 25mA
DI