A D V A N C E D S E M I C O N D U C T O R, I N C. REV 0
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 60 mA 32 V
BV
CES
I
C
= 8.0 mA V
BE
= 0 V 55 V
I
EBO
V
CE
= 2.0 V 500 µA
I
CBO
V
CB
= 30 V 500 µA
h
FE
V
CE
= 10 V I
C
= 400 mA 20 200 ---
C
ob
V
CB
= 28 V f = 1.0 MHz 10 15 pF
P
out
η
c
V
CE
= 28 V I
C
= 400 mA f = 400 MHz
P
IN
= 0.63 W
7.9
55
10.7
65
W
%



NPN SILICON RF POWER TRANSISTOR
2SC2893
DESCRIPTION:
The ASI 2SC2893 is Designed for
use in UHF amplifiers up to 400 MHz.

FEATURES:
• P
OUT
= 10.7 W Typical at 400 MHz
• Omnigold™ Metallization System
MAXIMUM RATINGS
I
C
1.5 A
V
CB
55 V
V
CE
32 V
V
EB
3.0 V
P
DISS
22 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
8.0 °C/W

PACKAGE STYLE .280 4L STUD

MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H .245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J .217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
EE
B
C