BUD600
TELEFUNKEN Semiconductors
Rev. B2, 18-Jul-97
1 (9)
Silicon NPN High Voltage Switching Transistor
Features
C0068 Simple-sWitch-Off Transistor (SWOT)
C0068 HIGH SPEED technology
C0068 Planar passivation
C0068 100 kHz switching rate
C0068 Very low switching losses
C0068 Very low dynamic saturation
C0068 Very low operating temperature
C0068 Optimized RBSOA
C0068 High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
94 8964
1
2
3
BUD600
1 Base 2 Collector 3 Emitter
94 8965
2
1
3
BUD600 –SMD
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
case
= 25°C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage V
CEO
250 Vg
V
CEW
300 V
V
CES
600 V
Emitter-base voltage V
EBO
11 V
Collector current I
C
2 A
Collector peak current I
CM
3 A
Base current I
B
0.75 A
Base peak current I
BM
1 A
Total power dissipation T
case
≤ 60C0176C P
tot
12 W
Junction temperature T
j
150 C0176C
Storage temperature range T
stg
–65 to +150 C0176C