 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 1
1 Publication Order Number:
2N4401/D
2N4401
Preferred Device
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
40 Vdc
Collector − Base Voltage V
CBO
60 Vdc
Emitter − Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
JC
83.3 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
TO−92
CASE 29
STYLE 1
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
Y = Year
WW = Work Week
MARKING
DIAGRAM
2N
4401
YWW
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER