ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM
= 6500 V
I
TAVM
= 350 A
I
TRMS
= 550 A
I
TSM
= 4500 A
V
T0
=1.20V
r
T
= 2.300 mΩ
Phase Control Thyristor
5STP 03X6500
Doc. No. 5SYA1003-04 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Part Number 5STP 03X6500 5STP 03X6200 5STP 03X5800 Conditions
V
DSM
V
RSM
6500 V 6200 V 5800 V f = 5 Hz, t
p
= 10ms
V
DRM
V
RRM
5600 V 5300 V 4900 V f = 50 Hz, t
p
= 10ms
V
RSM1
7000 V 6700 V 6300 V t
p
= 5ms, single pulse
I
DSM ≤ 150 mA
V
DSM
I
RSM ≤ 150 mA
V
RSM
T
j
= 125°C
dV/dt
crit
1000 V/µs Exp. to 0.67 x V
DRM
, T
j
= 125°C
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110°C
Mechanical data
F
M
Mounting force nom. 10 kN
min. 8 kN
max. 12 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
mWeight 0.4kg
D
S
Surface creepage distance 38 mm
D
a
Air strike distance 21 mm