4AM16
器件描述：Silicon N-Channel/P-Channel Power MOSFET Array
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：87.88KB，共11页
Sponsor by e络盟器件资料摘要：
4AM16
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 4 A
P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
• High speed switching
• High density mounting
• Suitable for H-brided motor driver
Outline
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 4 A
P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
• High speed switching
• High density mounting
• Suitable for H-brided motor driver
Outline