A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C
= 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 20 mA 36 V
BV
CEO
I
C
= 50 mA 18
BV
EBO
I
E
= 5.0 mA 4.0 V
C
ob
V
CB
= 12.5 V f = 1.0 MHz 110 pF
P
OUT
P
IN

η
C

V
CC
= 12.5 V P
OUT
= 40 W f = 175 MHz
30


4.5
60
W
W
%
Z
IN
Z
L
P
OUT
= 30 W f = 175 MHz
1.0 + j1.4
1.75 + j0.5
Ω
Ω

NPN SILICON RF POWER TRANSISTOR
BM30-12
DESCRIPTION:
The ASI BM30-12 is Designed for
VHF land mobil applications in the 150-
175 MHZ range.
FEATURES:
• Common Emitter
• P
OUT
= 30 W at175 MHz
• Omnigold™ Metalization System
• Internal Matching network
MAXIMUM RATINGS
I
C
8.0 A
V
CES
36 V
V
CEO
18 V
V
EBO
4.0 V
P
DISS
65 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
2.7 °C/W
PACKAGE STYLE .500 6L FLG



















MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / mm

.725 / 18.42
H
DIM
K
L
I
J .970 / 24.64 .980 / 24.89
.170 / 4.32
N
M
.120 / 3.05 .135 / 3.43
.150 / 3.43 .160 / 4.06
.125 / 3.18
.090 / 2.29 .105 / 2.67
.285 / 7.24
.150 / 3.81

.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x ØN
FULL R
H
.835 / 21.21 .865 / 21.97
.210 / 5.33.200 / 5.08
C
B
E
E