 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 1
1 Publication Order Number:
BCW32LT1/D
BCW32LT1
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
32 Vdc
Collector-Base Voltage V
CBO
32 Vdc
Emitter-Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Total Device Dissipation
FR-5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
†
ORDERING INFORMATION
BCW32LT1 SOT−23
SOT−23 (TO−236AB)
CASE 318
STYLE 6
3000 Units / Reel
MARKING DIAGRAM
D2 M
M = Date Code
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
BCW32LT1G SOT−23
(Pb−Free)
3000 Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com