August 2005
F
D
FM2N111 Integ
r
ated N-Chan
nel PowerTrench
®
MOSFET and Schottky Diode
©2005 Fairchild Semiconductor Corporation FDFM2N111 Rev. C2 (W)1
FDFM2N111
Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
General Description
FDFM2N111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
Applications
„ Standard Buck Converter
Features
„ 4 A, 20 V R
DS(ON)
= 100mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 150mΩ @ V
GS
= 2.5 V
„ Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage ±12 V
I
D
Drain Current -Continuous (Note 1a) 4
A
-Pulsed 10
V
RRM
Schottky Repetitive Peak Reverse voltage 20 V
I
O
Schottky Average Forward Current (Note 1a) 2 A
P
D
Power dissipation (Steady State) (Note 1a)
Power dissipation (Steady State) (Note 1b)
1.7
W
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
o
C
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 70
o
C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 150
o
C/W
Device Marking Device Reel Size Tape Width Quantity
2N111 FDFM2N111 7inch 12mm 3000 units
5
1 6
2
3 4
MLP 3x3
TOP BOTTOM
A
A
S/C
S/C G
D
PIN 1
A
S/C
D
A
S/C
G

C D