EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BCP56T3

器件描述:NPN Silicon Epitaxial Transistor
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:144.33KB,共4页
Sponsor by e络盟
器件资料摘要:
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1 Publication Order Number:
BCP56T1/D
BCP56T1 Series
Preferred Devices
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223
package, which is designed for medium power surface mount
applications.
Features
• Pb−Free Package is Available
• High Current: 1.0 Amp
• The SOT-223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
• Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
• PNP Complement is BCP53T1
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
80 Vdc
Collector-Base Voltage V
CBO
100 Vdc
Emitter-Base Voltage V
EBO
5 Vdc
Collector Current I
C
1 Adc
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage
Temperature Range
T
J
, T
stg
−65 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Ambient
(surface mounted)
R
JA
83.3 °C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AWW
xxxx
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR 2,4
BASE
1
EMITTER
3
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
1
2
3
4
http://onsemi.com
xxxx = Specific Device Code
A = Assembly Location
WW = Work Week
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION