Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
8.1 12
33 40
R
θJL
1 1.5
A
Repetitive avalanche energy L=0.1mH
C
120 mJ
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
110
65
200
Avalanche Current
C
30
Power Dissipation
A
T
A
=25°C
P
DSM
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
W
Junction and Storage Temperature Range
A
P
D
°C
100
50
-55 to 175
T
C
=100°C
I
D
3.1
W
T
A
=70°C 2
AOB420, AOB420L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Oct 2004
Features
V
DS
(V) = 30V
I
D
= 110A
R
DS(ON)
< 6.5mΩ (V
GS
= 10V)
R
DS(ON)
< 10.0mΩ (V
GS
= 4.5V)
General Description
The AOB420 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
AOB420L (Green Product) is offered in a Lead Free
package.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.