Aug-30-2002
1
BCM856S
VPS05604
6
3
1
5
4
2
PNP Silicon AF Transistor Array
G01 Precision matched transistor pair: G02I
C
G03 10%
G01 For current mirror applications
G01 Low collector-emitter saturation voltage
G01 Two (galvanic) internal isolated Transistors
G01 Complementary type: BCM846S
EHA07175
6 54
321
C1 B2 E2
C2B1E1
TR1
TR2
Type Marking Pin Configuration Package
BCM856S 3Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
65 V
Collector-emitter voltage V
CES
80
Collector-base voltage V
CBO
80
Emitter-base voltage V
EBO
5
Collector current I
C
100 mA
Peak collector current I
CM
200
Total power dissipation-
T
S
= 115 °C
P
tot
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
140 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance