2SC6023
器件描述：NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：58.35KB，共15页
Sponsor by e络盟器件资料摘要：
2SC6023
No.8143-1/15
Features
•
Low-noise use : NF=1.2dB typ (f=2GHz).
•
High cut-off frequency : f
T
=14.5GHz typ (V
CE
=1V).
:f
T
=22GHz typ (V
CE
=3V).
•
Low operating voltage.
•
High gain : S21e
2
=14dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
9V
Collector-to-Emitter Voltage V
CEO
3.5 V
Emitter-to-Base Voltage V
EBO
2V
Collector Current I
C
35 mA
Collector Dissipation P
C
120 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=5V, I
E
=0 1.0 µA
Emitter Cutoff Current I
EBO
V
EB
=1V, I
C
=0 1 µA
DC Current Gain h
FE
V
CE
=3V, I
C
=15mA 80 160
Gain-Bandwidth Product
f
T
1V
CE
=1V, I
C
=5mA 14.5 GHz
f
T
2V
CE
=3V, I
C
=15mA 18 22 GHz
Reverse Transfer Capacitance Cre V
CB
=1V, f=1MHz 0.18 pF
Forward Transfer Gain
S21e
2
1V
CE
=1V, I
C
=5mA, f=2GHz 9.5 11 dB
S21e
2
2V
CE
=3V, I
C
=15mA, f=2GHz 14 dB
Noise Figure NF V
CE
=1V, I
C
=5mA, f=2GHz 1.2 dB
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8143
31005AB TS IM TB-00000431
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC6023
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications
No.8143-1/15
Features
•
Low-noise use : NF=1.2dB typ (f=2GHz).
•
High cut-off frequency : f
T
=14.5GHz typ (V
CE
=1V).
:f
T
=22GHz typ (V
CE
=3V).
•
Low operating voltage.
•
High gain : S21e
2
=14dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
9V
Collector-to-Emitter Voltage V
CEO
3.5 V
Emitter-to-Base Voltage V
EBO
2V
Collector Current I
C
35 mA
Collector Dissipation P
C
120 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=5V, I
E
=0 1.0 µA
Emitter Cutoff Current I
EBO
V
EB
=1V, I
C
=0 1 µA
DC Current Gain h
FE
V
CE
=3V, I
C
=15mA 80 160
Gain-Bandwidth Product
f
T
1V
CE
=1V, I
C
=5mA 14.5 GHz
f
T
2V
CE
=3V, I
C
=15mA 18 22 GHz
Reverse Transfer Capacitance Cre V
CB
=1V, f=1MHz 0.18 pF
Forward Transfer Gain
S21e
2
1V
CE
=1V, I
C
=5mA, f=2GHz 9.5 11 dB
S21e
2
2V
CE
=3V, I
C
=15mA, f=2GHz 14 dB
Noise Figure NF V
CE
=1V, I
C
=5mA, f=2GHz 1.2 dB
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8143
31005AB TS IM TB-00000431
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC6023
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications