Transistors
1
Publication date: April 2004 SJC00304AED
2SB1699
Silicon PNP epitaxial planar type
For power amplification
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−60 V
Emitter-base voltage (Collector open) V
EBO
−6V
Collector current I
C
−2A
Peak collector current I
CP
−4A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Pulse measurement
Note)
*
: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
Marking Symbol: 3A
4.5±0.1
3.0±0.15
45˚
2.6
±
0.1
0.4 max.
1.6±0.2 1.5±0.1
4.0
2.5
±
0.1
3˚
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08 0.4±0.040.4±0.08
12
3
1.5±0.1
3˚
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −60 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −60 V, I
E
= 0 −100 µA
Collector-emitter cut-off current (Base open) I
CEO
V
CE
= −60 V, I
B
= 0 −100 µA
Forward current transfer ratio
*
h
FE1
V
CE
= −4 V, I
C
= −1 A 80 250 
h
FE2
V
CE
= −4 V, I
C
= − 0.2 A 60
h
FE3
V
CE
= −4 V, I
C
= −2 A 30
Collector-emitter saturation voltage
*
V
CE(sat)
I
C
= −2 A, I
B
= −250 mA − 0.5 V
Turn-on time t
on
I
C
= −1 A, I
B1
= 0.1 A 0.2 µs
Storage time t
stg
I
B2
= − 0.1 A, V
CC
= −50 V 0.4 µs
Fall time t
f
0.1 µs
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 180 MHz