1A313
器件描述:High-Performance LED Power Transmission
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Sponsor by e络盟
器件资料摘要:
PRODUCT INFORMATION
Europe: Tel (46) 8 58 02 45 00 Fax (46) 8 58 02 01 10
Tel (44) 1291 436180 Fax (44) 1291 436771
America: Tel 1-800-96MITEL Fax (613) 592-6909
Asia: Tel (65) 293 5312 Fax (65) 293 8527
12425.11 1994-09-20
860nm
1A313
High-Performance LED
Power Transmission
Fiber:
300/330 mm
Step
Index
NA= 0.37
Thermal Characteristics
Absolute Maximum Ratings
0.6
14
Ø1.5
Ø4.7
3.7
0.4
5.4
2.5
CASE
ANODECATHODE
BOTTOM VIEW
The anode is in electrical contact with the case.
TO-46 Package With Lens
All dimensions in mm
Optical and Electrical Characteristics (25° C Case Temperature)
Note 1: Measured at the exit of 100 meters of fiber.
Note 2: Mounted in a heatsinked metal housing.
This is the ultimate in high power for
850 nm LEDs - making it the device
of choice for high power transmis-
sion via large core fibers. The her-
metically sealed package contributes
to its high reliability and the device
can withstand the harshest environ-
mental conditions.
PARAMETER SYMBOL LIMIT
Storage Temperature T
stg
-55 to +1258C
Operating Temperature (derating: Fig.4) T
op
-55 to +1258C
Electrical Power Dissipation (derating: Fig.4) P
tot
660 mW
Continuous Forward Current (f 10 kHz) I
F
300 mA
Peak Forward Repetitive Current (duty cycle 50%) I
FRM
500 mA
Peak Forward Surge Current (100 ms pulse)
I
FSM 1000 mA
Reverse Voltage V
R
1.5 V
Soldering Temperature (2mm from the case for 10 sec) T
sld
2608C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Thermal Resistance - Infinite Heat Sink R
thjc
75 8C/W
Thermal Resistance - In Housing (Note 2) R
thja
150 8C/W
Temperature Coefficient - Optical Power dP/dT
j
-0.5 %/8C
Temperature Coefficient -Wavelength dl /dT
j
0.3 nm/8C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Fiber-Coupled Power P
fiber
57 mWI
F
=300 mA
(Fig.1,2,&3) (Table1) (Note 1)(Note 2)
Rise and Fall Time t
r
,t
f
48nsI
F
=300 mA
(10-90%) (no bias)
Bandwidth f
c
85 MHz I
F
=300 mA
(3dB
el
)
Peak Wavelength l
p
840 860 880 nm I
F
=100 mA
Spectral Width (FWHM) Dl 40 nm I
F
=100 mA
Forward Voltage (Fig.5) V
F
1.9 2.2 V I
F
=300 mA
Reverse Current I
R
20 mA V
R
=1V
Capacitance C 250 pF V
R
= 0V, f=1 MHz