1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0


SOT-23 Plastic-Encapsulate Transistors


AV9015LT1 TRANSISTOR (PNP)

FEATURES

Power dissipation
P
CM:
0.2 W (Tamb=25℃)
Collector current
I
CM:
-0.1 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100µA, I
E
=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO I
E
=-100µA, I
C
=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA
DC current gain hFE(1) VCE=-5V, IC= -1mA 200 1000
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V
Transition frequency f
T

V
CE
=-5V, I
C
= -10mA
f=30MHz
150 MHz

CLASSIFICATION OF h
FE(1)

Rank L H
Range 200-450 450-1000

DEVICE MARKING S9015LT1=M6



























Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR