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©

2000
MOS FIELD EFFECT TRANSISTOR
2SK3455
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D14757EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3455 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications
such as switching power supply, AC adapter.
FEATURES
•Low gate charge
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 6.0 A)
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 500 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±12 A
Drain Current (Pulse)
Note1
ID(pulse) ±36 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W
Total Power Dissipation (TC = 25°C) PT2 50 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 12 A
Single Avalanche Energy
Note2
EAS 103 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3455 Isolated TO-220