2SK4035-A
器件资料摘要：
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D17447EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
2SK4035 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state
resistance and because it is the small size surface mounting
externals, is the best for the high-speed switching usage of the
equipment that promotes the automation of space-saving and
mounting.
FEATURES
• Low input capacitance
Ciss = 74 pF TYP.
• Low on-state resistance
RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)
• Small and surface mount package (SC-96)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK4035 SC-96 (Mini Mold Thin Type)
2SK4035-A
Note
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in external
electrode and other parts.)
Marking: XP
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 250 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TA = 25°C) ID(DC) ±0.5 A
Drain Current (pulse)
Note1
ID(pulse) ±2.0 A
Total Power Dissipation (TA = 25°C) PT1 0.2 W
Total Power Dissipation (TA = 25°C)
Note2
PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8 ±0.2
1.5
0.95
1.9
2.9 ±0.2
0.95
0.65
+0.1 –0.15
1. Gate
2. Source
3. Drain
21
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D17447EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
2SK4035 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state
resistance and because it is the small size surface mounting
externals, is the best for the high-speed switching usage of the
equipment that promotes the automation of space-saving and
mounting.
FEATURES
• Low input capacitance
Ciss = 74 pF TYP.
• Low on-state resistance
RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)
• Small and surface mount package (SC-96)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK4035 SC-96 (Mini Mold Thin Type)
2SK4035-A
Note
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in external
electrode and other parts.)
Marking: XP
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 250 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TA = 25°C) ID(DC) ±0.5 A
Drain Current (pulse)
Note1
ID(pulse) ±2.0 A
Total Power Dissipation (TA = 25°C) PT1 0.2 W
Total Power Dissipation (TA = 25°C)
Note2
PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8 ±0.2
1.5
0.95
1.9
2.9 ±0.2
0.95
0.65
+0.1 –0.15
1. Gate
2. Source
3. Drain
21
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain