©

1998,2001
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13335EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 110 mΩ MAX. (VGS = 10 V, ID = 13 A)
• Low input capacitance
Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 200 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±25 A
Drain Current (pulse)
Note1
ID(pulse) ±75 A
Total Power Dissipation (TC = 25°C) PT1 100 W
Total Power Dissipation (TA = 25°C) PT2 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 25 A
Single Avalanche Energy
Note2
EAS 250 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3112 TO-220AB
2SK3112-S TO-262
2SK3112-ZJ TO-263(MP-25ZJ)
(TO-220AB)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.