1
Item Symbol Ratings Unit
Drain-source voltage VDS 600
Continuous drain current ID ±13
Pulsed drain current ID(puls] ±52
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 13
Maximum Avalanche Energy EAS *1 216.7
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.16
Tc=25
°C
80
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *4 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3451-01MR
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=6A VGS=10V
ID=6A VDS=25V
VCC=300V ID=6A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
1.56
58.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=12A
VGS=10V
L=2.36mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
600
3.0 5.0
25
250
10 100
0.50 0.65
5.5 11
1600 2400
160 240
7 10.5
18 27
16 24
35 50
815
34 51
12.5 19
11.5 17.5
13
1.00 1.50
0.75
6.5
-55 to +150
Outline Drawings [mm]
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C *4 t=60sec, f=60Hz
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Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
TO-220F
Equivalent circuit schematic
*1 L=2.36mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch=150°C
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