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1998©
Document No. D13174EJ1V1DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1588
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
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2002
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
Large current capacity in small dimension: IC(DC) = 7 A
Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A)
Ideal for use in ramp drivers or inductance drivers
Complementary transistor: 2SB1097
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 7.0 A
Collector current (Pulse) IC(pulse)*15
Base current (DC) IB(DC) 3.5 A
Total power dissipation PT (TC = 25°C) 30 W
Total power dissipation PT (TA = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 80 V, IE = 0 10 µA
Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10 µA
DC current gain hFE1** VCE = 1.0 V, IC = 3 A 40 200
DC current gain hFE2** VCE = 1.0 V, IC = 5 A 20
Collector saturation voltage VCE(sat)** IC = 5 A, IB = 0.5 A 0.5 V
Base saturation voltage VBE(sat)** IC = 5 A, IB = 0.5 A 1.5 V
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/per pulsed
hFE CLASSIFICATION
Marking M L K
hFE1 40 to 80 60 to 120 100 to 200