Document No. D16119EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
© 2002
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
• Large current capacity:
IC(DC): −10 A, IC(pulse): −15 A
High hFE and low collector saturation voltage:
hFE = 200 MIN. (@VCE = −2.0 V, IC = −0.5 A)
VCE(sat) ≤ −0.25 V (@IC = −4.0 A, IB = −0.05 A)
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −30 V
Collector to emitter voltage VCEO −20 V
Emitter to base voltage VEBO −10 V
Collector current (DC) IC(DC) −10 A
Collector current (pulse) IC(pulse)* −15 A
Base current (DC) IB(DC) −0.5 A
Total power dissipation PT (Ta = 25°C)** 1.0 W
Total power dissipation PT (Tc = 25°C) 15 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
** Printing board mounted